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BD681G

Manufacturer:

On Semiconductor

Mfr.Part #:

BD681G

Datasheet:
Description:

BJTs TO-225-3 Through Hole NPN 40 W Collector Base Voltage (VCBO):100 V Collector Emitter Voltage (VCEO):100 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Voltage Rating (DC)100 V
Length7.74 mm
Width2.66 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height11.04 mm
PackagingBulk
Halogen FreeHalogen Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Current Rating4 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation40 W
Power Dissipation40 W
Max Collector Current4 A
Collector Emitter Breakdown Voltage100 V
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)100 V
Collector Base Voltage (VCBO)100 V
Collector Emitter Saturation Voltage2.5 V
Emitter Base Voltage (VEBO)5 V
hFE Min750
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current500 µA
Transistor TypeNPN

Stock: 206

Distributors
pcbx
Unit Price$0.82560
Ext.Price$0.82560
QtyUnit PriceExt.Price
1$0.82560$0.82560
10$0.69408$6.94080
25$0.64938$16.23450
50$0.60756$30.37800
100$0.56842$56.84200
300$0.54818$164.45400
500$0.52865$264.32500
1000$0.50877$508.77000